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| product specification www.jmnic.com jmn ic silicon power transistors 2SC4941 description ? with to-3pml package ? switching power transistor pinning pin description 1 base 2 collector 3 emitter fig.1 simplified outline (to-3pml) and symbol absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current 6 a i cm collector current-peak 12 a i b base current 3 a i b base current-peak 6 a p t total power dissipation t c =25 ?? 65 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 1.92 ?? /w
product specification www.jmnic.com jm n ic silicon ower transistors 2SC4941 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ;i b =0 800 v v cbo collector-base voltage i c =1ma ;i e =0 1500 v v cesat collector-emitter saturation voltage i c =3a i b =0.6a 0.5 v v besat base-emitter saturation voltage i c =3a i b =0.6a 1.5 v i cbo collector cut-off current v cb =1200v i e =0 100 | a i ceo collector cut-off current v ce =ratedv ceo ; i b =0 100 | a i ebo emitter cut-off current v eb =ratedv ebo ; i c =0 100 | a h fe-1 dc current gain i c =1a ; v ce =5v 15 h fe-2 dc current gain i c =1ma ; v ce =5v 7 f t transition frequency i c =0.6a ; v ce =10v 8 mhz switching times t on turn-on time 0.5 | s t s storage time 3.5 | s t f fall time i c =3a i b1 =0.6a; i b2 =-1.2a v bb2 =4v r l =85 |? 0.3 | s product specification www.jmnic.com jmn ic silicon power transistors 2SC4941 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) |
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